d a t a sh eet product data sheet supersedes data of 2001 mar 27 2001 jul 20 discrete semiconductors pbss5140u 40 v low v cesat pnp transistor ag e m3d102
2001 jul 20 2 nxp semiconductors product data sheet 40 v low v cesat pnp transistor pbss5140u features ? low collector-emitter saturation voltage ? high current capability ? improved device reliabilit y due to reduced heat generation ? enhanced performance over sot23 1a standard packaged transistor. applications ? general purpose switching and muting ? lcd back lighting ? supply line switching circuits ? battery driven equipment (mobile phones, video cameras and hand-held devices). description pnp low v cesat transistor in a sot323 (sc-70) plastic package. marking type number marking code pbss5140u 51t pinning pin description 1 base 2 emitter 3 collector handbook, halfpage mam048 top view 2 1 3 2 3 1 fig.1 simplified outline (sot323; sc-70) and symbol. quick reference data symbol parameter max. unit v ceo collector-emitter voltage ? 40 v i cm peak collector current ? 2 a r cesat equivalent on-resistance <500 m
2001 jul 20 3 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm 2 . thermal characteristics notes 1. device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm 2 . symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? ? 40 v v ceo collector-emitter voltage open base ? ? 40 v v ebo emitter-base voltage open collector ? ? 5 v i c collector current (dc) ? ? 1 a i cm peak collector current ? ? 2 a i bm peak base current ? ? 1 a p tot total power dissipation t amb 25 c; note 1 ? 250 mw t amb 25 c; note 2 ? 350 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air; note 1 500 k/w in free air; note 2 357 k/w
2001 jul 20 4 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u characteristics t amb = 25 c unless otherwise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = ? 40 v; i c = 0 ? ? ? 100 na v cb = ? 40 v; i c = 0; t amb = 150 c ? ? ? 50 a i ceo collector-emitter cut-off current v ce = ? 30 v; i b = 0 ? ? ? 100 na i ebo emitter-base cut-off current v eb = ? 5 v; i c = 0 ? ? ? 100 na h fe dc current gain v ce = ? 5 v; i c = ? 1 ma 300 ? ? v ce = ? 5 v; i c = ? 100 ma 300 ? 800 v ce = ? 5 v; i c = ? 500 ma 250 ? ? v ce = ? 5 v; i c = ? 1 a 160 ? ? v cesat saturation voltage i c = ? 100 ma; i b = ? 1 ma ? ? ? 200 mv i c = ? 500 ma; i b = ? 50 ma ? ? ? 250 mv i c = ? 1 a; i b = ? 100 ma ? ? ? 500 mv r cesat equivalent on-resistance i c = ? 500 ma; i b = ? 50 ma; note 1 ? 300 <500 m v besat base-emitter saturation voltage i c = ? 1 a; i b = ? 50 ma ? ? ? 1.1 v v beon base-emitter turn-on voltage v ce = ? 5 v; i c = ? 1 a ? ? ? 1 v f t transition frequency i c = ? 50 ma; v ce = ? 10 v; f = 100 mhz 150 ? ? mhz c c collector capacitance v cb = ? 10 v; i e = i e = 0; f = 1 mhz ? ? 12 pf
2001 jul 20 5 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u handbook, halfpage mld543 0 1200 400 800 ? 10 ? 1 ? 1 ? 10 i c (ma) h fe ? 10 2 ? 10 3 ? 10 4 (1) (3) (2) fig.2 dc current gain as a function of collector current; typical values. v ce = ? 5 v. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage ? 10 ? 1 ? 10 ? 1 ? 1 ? 10 ? 10 2 ? 10 3 ? 10 4 ? 10 ? 1 mld544 i c (ma) v be (v) (3) (2) (1) fig.3 base-emitter voltage as a function of collector current; typical values. v ce = ? 5 v. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 150 c. handbook, halfpage ? 10 3 ? 10 2 ? 10 ? 1 mld545 ? 1 ? 10 ? 10 2 i c (ma) v cesat (mv) ? 10 3 ? 10 4 (2) (1) (3) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage mld677 10 1 10 2 ? 10 ? 1 ? 1 ? 10 i c (ma) r cesat ( ) ? 10 ? 2 ? 10 ? 3 ? 10 ? 4 10 ? 1 (3) (1) (2) fig.5 equivalent on-resistance as a function of collector current; typical values. i c /i b = 10. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c.
2001 jul 20 6 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u handbook, halfpage 0 ? 200 ? 1000 ? 400 ? 600 ? 800 mld678 i c (ma) f t (mhz) 300 0 100 200 fig.6 transition frequency as a function of collector current; typical values. v ce = ? 10 v. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c.
2001 jul 20 7 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u package outline unit a 1 max b p cd e e 1 h e l p qw v references outline version european projection issue date iec jedec eiaj mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.2 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot323 sc-70 w m b p d e 1 e a b a 1 l p q detail x c h e e v m a a b y 0 1 2 mm scale a x 12 3 plastic surface mounted package; 3 leads sot32 3 97-02-28
2001 jul 20 8 nxp semico nductors product data sheet 40 v low v cesat pnp transistor pbss5140u data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 613514/02/pp9 date of release: 2001 jul 20 document order number: 9397 750 08432
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